Boosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTs

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Analytic Models of Synchronized Dual-Gate a-IGZO TFTs

The equations for the transfer characteristics and sub-threshold swing of dual-gate a-IGZO TFTs, when the top and bottom gate electrodes are connected (synchronized), are developed based on device physics. From these equations, it is found that synchronized DG aIGZO TFTs can be considered as conventional TFTs with modified gate capacitance and threshold voltage. The device parameters of coplana...

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ژورنال

عنوان ژورنال: IEEE Electron Device Letters

سال: 2012

ISSN: 0741-3106,1558-0563

DOI: 10.1109/led.2012.2220955